Thrust III: 2D Nanoelectronics

Written By Joonki Suh
Thrust III_ 2D Nanoelectronics - Trench Substrate Array Batch Process v2
Thrust III_ 2D Nanoelectronics - Planar MoS2 Back Gate FET

We will use our developed 2D materials as backbone to gain in-depth understanding in relevant device operations and solve fundamental challenges encountered in nanoelectronics.

  • 2D nanoelectronics for logic/memory applications

  • Non-planar device geometry for 3D integration

  • Beyond 2D FETs: Tunneling FETs & electrochemical transistors

Joonki Suh
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Thrust II: Thin-film Synthetic Science
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Thrust IV: Nonvolatile Memory for Neuromorphics